Walter Schottky Institut, Technische Universität München , Munich, Germany.
Nano Lett. 2014 May 14;14(5):2359-64. doi: 10.1021/nl4047619. Epub 2014 Apr 9.
For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV(-) across NV(0) to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.
对于金刚石中氮空位（NV）中心的许多应用，人们非常希望了解和主动控制其电荷状态。在这项工作中，我们通过使用全金刚石面内栅纳米结构，证明了单个 NV 中心的电荷状态从 NV(-)到 NV(0)再到非荧光暗态的可逆操纵。通过向面内栅结构施加电压，可以使能带弯曲足以实现 NV 中心的电荷状态转换。这些金刚石面内结构可以作为透明的顶栅，从而可以从纳米结构数十微米远的地方远程控制 NV 中心的电荷状态。
