Department of Physics, University of Wisconsin, Madison, Wisconsin 53706, United States.
Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor, Santiago 7560908, Chile.
Nano Lett. 2021 Aug 25;21(16):6960-6966. doi: 10.1021/acs.nanolett.1c02250. Epub 2021 Aug 2.
Control over the charge states of color centers in solids is necessary to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-band-gap semiconductors are complex, and much remains unknown. We utilize a single-shot charge-state readout of an individual nitrogen-vacancy (NV) center to probe the charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many micrometers away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV. These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers and provide a novel way to probe and control charge dynamics in diamond.
控制固体中色心的电荷状态对于在量子技术中充分利用它们是必要的。然而，宽禁带半导体中深缺陷的微观电荷动力学很复杂，还有很多未知之处。我们利用单个氮空位（NV）中心的单次电荷态读出来探测金刚石中周围缺陷的电荷动力学。我们表明，NV 中心的电荷状态可以通过捕获由远处缺陷的光学照明产生的空穴来转换。通过这种方法，我们研究了硅空位（SiV）中心的光电荷转换，并提供了证据表明，在光学照明下 SiV 中心的暗态是 SiV。这些测量表明，在设计和实现具有色心的量子器件时，载流子的产生、输运和俘获是需要考虑的重要因素，并为探测和控制金刚石中的电荷动力学提供了一种新方法。
