Kim Areum, Choi Eunmi, Son Hyungbin, Pyo Sung Gyu
J Nanosci Nanotechnol. 2014 Feb;14(2):2001-11. doi: 10.1166/jnn.2014.8758.
Unlike conventional two-dimensional (2D) planar structures, signal or power is supplied through through-silicon via (TSV) in three-dimensional (3D) integration technology to replace wires for binding the chip/wafer. TSVs have becomes an essential technology, as they satisfy Moore's law. This 3D integration technology enables system and sensor functions at a nanoscale via the implementation of a highly integrated nano-semiconductor as well as the fabrication of a single chip with multiple functions. Thus, this technology is considered to be a new area of development for the systemization of the nano-bio area. In this review paper, the basic technology required for such 3D integration is described and methods to measure the bonding strength in order to measure the void occurring during bonding are introduced. Currently, CMOS image sensors and memory chips associated with nanotechnology are being realized on the basis of 3D integration technology. In this paper, we intend to describe the applications of high-performance nano-biosensor technology currently under development and the direction of development of a high performance lab-on-a-chip (LOC).
与传统的二维（2D）平面结构不同，在三维（3D）集成技术中，信号或功率通过硅通孔（TSV）提供，以取代用于连接芯片/晶圆的导线。由于TSV满足摩尔定律，它已成为一项关键技术。这种3D集成技术通过实现高度集成的纳米半导体以及制造具有多种功能的单芯片，在纳米尺度上实现系统和传感器功能。因此，该技术被认为是纳米生物领域系统化的一个新的发展领域。在这篇综述论文中，描述了这种3D集成所需的基本技术，并介绍了为测量键合过程中出现的空隙而测量键合强度的方法。目前，基于3D集成技术正在实现与纳米技术相关的CMOS图像传感器和存储芯片。在本文中，我们打算描述当前正在开发的高性能纳米生物传感器技术的应用以及高性能芯片实验室（LOC）的发展方向。
