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湿度对铟镓砷表面量子点电学性质的强烈影响。

Strong influence of the humidity on the electrical properties of InGaAs surface quantum dots.

作者信息

Milla M J, Ulloa J M, Guzmán Á

机构信息

Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Dpto. Ingeniería Electrónica, Universidad Politécnica de Madrid , Ciudad Universitaria s/n, 28040 Madrid, Spain.

出版信息

ACS Appl Mater Interfaces. 2014 May 14;6(9):6191-5. doi: 10.1021/am5010442. Epub 2014 Apr 28.

Abstract

The impact of the environment on the electrical properties of uncapped In0.5Ga0.5As nanostructures is studied as a function of different atmospheres for sensing applications. Electrical response from surface quantum dots (QD) shows a strong dependence on the atmosphere, in contrast to the response of 2D nanostructures. The sheet resistance drops by 99% from vacuum to air, and decreases more than one order of magnitude when relative humidity changes from 0 to 70%. The adsorption of water molecules onto the QD surface improves the conductivity likely by reducing the density of surface states acting as carrier traps, which enhances electron transport.

摘要

研究了环境对未封装的In0.5Ga0.5As纳米结构电学性质的影响,该影响是作为用于传感应用的不同气氛的函数。与二维纳米结构的响应相反,来自表面量子点(QD)的电响应显示出对气氛的强烈依赖性。从真空到空气,薄层电阻下降99%,当相对湿度从0%变化到70%时,薄层电阻降低超过一个数量级。水分子在量子点表面的吸附可能通过降低作为载流子陷阱的表面态密度来提高导电性,从而增强电子传输。

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