EaStCHEM School of Chemistry, University of St Andrews, St Andrews KY16 9ST, United Kingdom ; Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
EaStCHEM School of Chemistry, University of St Andrews, St Andrews KY16 9ST, United Kingdom.
Beilstein J Nanotechnol. 2014 Mar 10;5:258-67. doi: 10.3762/bjnano.5.28. eCollection 2014.
The intercalation of Cu at the interface of a self-assembled monolayer (SAM) and a Au(111)/mica substrate by underpotential deposition (UPD) is studied as a means of high resolution patterning. A SAM of 2-(4'-methylbiphenyl-4-yl)ethanethiol (BP2) prepared in a structural phase that renders the Au substrate completely passive against Cu-UPD, is patterned by modification with the tip of a scanning tunneling microscope. The tip-induced defects act as nucleation sites for Cu-UPD. The lateral diffusion of the metal at the SAM-substrate interface and, thus, the pattern dimensions are controlled by the deposition time. Patterning down to the sub-20 nm range is demonstrated. The difference in strength between the S-Au and S-Cu bond is harnessed to develop the latent Cu-UPD image into a patterned binary SAM. Demonstrated by the exchange of BP2 by adamantanethiol (AdSH) this is accomplished by a sequence of reductive desorption of BP2 in Cu free areas followed by adsorption of AdSH. The appearance of Au adatom islands upon the thiol exchange suggests that the interfacial structures of BP2 and AdSH SAMs are different.
通过在自组装单层(SAM)和金(111)/云母基底界面进行欠电位沉积(UPD)将 Cu 嵌入,这被研究作为一种高分辨率图案化的手段。通过使用扫描隧道显微镜的尖端修饰,将呈现出使 Au 基底完全对 Cu-UPD 呈惰性的结构相的 2-(4'-甲基联苯-4-基)乙硫醇(BP2)SAM 进行图案化。尖端诱导的缺陷充当 Cu-UPD 的成核位点。金属在 SAM-基底界面的横向扩散,因此,图案尺寸由沉积时间控制。证明可以达到低于 20nm 的图案化范围。利用 S-Au 和 S-Cu 键之间的强度差异,将潜在的 Cu-UPD 图像开发成图案化的二元 SAM。通过用金刚烷硫醇(AdSH)交换 BP2 来证明这一点,这是通过在 Cu 自由区域中进行 BP2 的还原解吸序列,然后吸附 AdSH 来实现的。在硫醇交换时出现的 Au 原子岛表明 BP2 和 AdSH SAM 的界面结构不同。