Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
Nano Lett. 2014 Jun 11;14(6):3214-9. doi: 10.1021/nl5005916. Epub 2014 May 12.
Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.
激光划线是一种有吸引力的减少氧化石墨烯（rGO）生长和图案化技术，因为该工艺具有低成本、高效、无转移和灵活的特点。已经展示了各种激光划线 rGO（LSG）组件，如电容器、气体传感器和应变传感器。然而，在技术的实际应用中仍然存在障碍，即在系统的所有组件都使用激光划线制造的情况下。如果开发出记忆组件，将大大拓宽低成本、柔性电子系统的应用空间。首次通过实验证明了使用激光划线 rGO 作为底电极的低成本电阻式随机存取存储器（ReRAM）的制造方法。一步激光划线技术允许在柔性基板或非平整基板上直接进行无转移 rGO 合成。使用这种高效的激光划线技术，可以在 25 分钟内完成高达 100 cm² 的存储阵列区域的图案化。由于不需要光刻的光刻胶涂层，因此图案化 rGO 的表面仍然像其原始状态一样干净。这项工作使用激光划线技术制造了 Ag/HfOx/LSG ReRAM。介绍了全面的电特性，包括无形成行为、稳定的开关、合理的可靠性性能以及每个存储单元具有 2 位存储的潜力。结果表明，激光划线技术有可能为实际应用生产更具成本效益和更高效的基于 rGO 的电路和系统。
