Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542.
1] Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542 [2] Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543 [3] Graphene Research Centre, National University of Singapore, 3 Science Drive 3, Singapore, 117543 [4] National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Jiang Su, China, 215123.
Sci Rep. 2014 May 8;4:4891. doi: 10.1038/srep04891.
Molybdenum oxides have been widely investigated for their broad applications ranging from electronics to energy storage. Photodetectors based on molybdenum trioxide (MoO3), however, were seldom reported owing to their low conductivity and weak photoresponse. Herein we report a photodetector based on single MoO3 nanobelt with wide visible spectrum response by introducing substantial gap states via H2 annealing. The pristine MoO3 nanobelt possessed low electrical conductance and no photoresponse for nearly all visible lights. The H2 annealing can significantly improve the conductance of MoO3 nanobelt, and result in a good photodetector with wide visible spectrum response. Under illumination of 680 nm light, the photodetector exhibited high responsivity of ~56 A/W and external quantum efficiency of ~10200%. As corroborated by in situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy investigations, such strong wide spectrum photoresponse arises from the largely enriched gap states in the MoO3 nanobelt after H2 annealing.
钼氧化物由于其在电子学到储能等广泛领域的应用而受到广泛研究。然而,由于其导电性低和光响应弱,基于三氧化钼(MoO3)的光探测器很少有报道。在此,我们通过引入大量的间隙态,报道了一种基于单根 MoO3 纳米带的具有宽可见光谱响应的光探测器,该间隙态通过 H2 退火产生。原始的 MoO3 纳米带的电导很低,几乎对所有可见光都没有光响应。H2 退火可以显著提高 MoO3 纳米带的电导,并产生具有宽可见光谱响应的良好光探测器。在 680nm 光的照射下,该光探测器表现出高达56A/W 的高响应率和10200%的外量子效率。原位紫外光电子能谱和 X 射线光电子能谱研究证实,这种强的宽光谱光响应源于 H2 退火后 MoO3 纳米带中大量富有的间隙态。