School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798.
ACS Nano. 2012 Jan 24;6(1):74-80. doi: 10.1021/nn2024557. Epub 2011 Dec 21.
A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
我们制备了一种基于机械剥离的单层 MoS2纳米片的新型光电晶体管，并详细研究了其光致电特性。在恒定的漏极或栅极电压下，光电晶体管产生的光电流仅由照射的光功率决定。光电流的产生和消除的开关行为可以在大约 50 毫秒内完全完成，并且具有良好的稳定性。特别是，与基于石墨烯的器件相比，单层 MoS2光电晶体管表现出更好的光电响应率。这种独特的特性，包括对入射光的控制、快速的光开关以及良好的光电响应率，为未来开发用于多功能光电电子器件的单层半导体材料铺平了道路。
