Yalcin Anil O, Fan Zhaochuan, Goris Bart, Li Wun-Fan, Koster Rik S, Fang Chang-Ming, van Blaaderen Alfons, Casavola Marianna, Tichelaar Frans D, Bals Sara, Van Tendeloo Gustaaf, Vlugt Thijs J H, Vanmaekelbergh Daniël, Zandbergen Henny W, van Huis Marijn A
Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nano Lett. 2014 Jun 11;14(6):3661-7. doi: 10.1021/nl501441w. Epub 2014 May 23.
Here, we show a novel solid-solid-vapor (SSV) growth mechanism whereby epitaxial growth of heterogeneous semiconductor nanowires takes place by evaporation-induced cation exchange. During heating of PbSe-CdSe nanodumbbells inside a transmission electron microscope (TEM), we observed that PbSe nanocrystals grew epitaxially at the expense of CdSe nanodomains driven by evaporation of Cd. Analysis of atomic-resolution TEM observations and detailed atomistic simulations reveals that the growth process is mediated by vacancies.
在此,我们展示了一种新型的固-固-气(SSV)生长机制,通过蒸发诱导的阳离子交换实现异质半导体纳米线的外延生长。在透射电子显微镜(TEM)内加热PbSe-CdSe纳米哑铃时,我们观察到PbSe纳米晶体以CdSe纳米域为代价外延生长,这是由Cd的蒸发驱动的。对原子分辨率TEM观察结果和详细的原子模拟分析表明,生长过程由空位介导。