Sun Qiang, Pan Dong, Li Meng, Zhao Jianhua, Chen Pingping, Lu Wei, Zou Jin
Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Nanoscale. 2020 Jun 4;12(21):11711-11717. doi: 10.1039/d0nr02892d.
In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <001[combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of <001[combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of <001[combining macron]> III-V nanowires, which provides pathways in controlling the growth of <001[combining macron]> semiconductor nanowires.
原位透射电子显微镜表征是研究催化剂诱导的半导体纳米线生长机制的有力方法。通过提供原子水平上晶体生长的直接证据，对金催化的<001[组合长音符号]>砷化铟纳米线进行了实时原位加热研究。研究发现，金催化剂在纳米线生长过程中保持固态，并与其下方的砷化铟纳米线保持固定的外延关系，这表明了气-固-固机制。重要的是，<001[组合长音符号]>砷化铟纳米线在催化剂/纳米线界面处逐层生长的现象很明显。这项研究为气-固-固生长提供了直接见解，并阐明了<001[组合长音符号]>III-V族纳米线的生长机制，为控制<001[组合长音符号]>半导体纳米线的生长提供了途径。
