二维X射线吸收近边结构-阴极荧光成像：氧化锌纳米线阵列中增强的带隙发射观测
2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays.
作者信息
Wang Zhiqiang, Guo Xiaoxuan, Sham Tsun-Kong
机构信息
Department of Chemistry, The University of Western Ontario, 1151 Richmond Street, London, Ontario N6A 5B7, Canada.
出版信息
Nanoscale. 2014 Jun 21;6(12):6531-6. doi: 10.1039/c4nr01049c.
PMID:24845079
Abstract
Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed.
摘要
利用二维X射线吸收近边结构-阴极荧光光谱法发现，当激发能量扫过氧K边时，ZnO纳米线阵列的带隙发射显著增强，即带隙发射与缺陷发射之间的强度比增加了一个多数量级。文中讨论了可能的机制。
Zotero 插件