烷基取代苝的晶体管应用。
Transistor application of alkyl-substituted picene.
机构信息
Department of Chemistry, Okayama University, Okayama 700-8530, Japan.
Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
出版信息
Sci Rep. 2014 May 23;4:5048. doi: 10.1038/srep05048.
Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm2 V(-1) s(-1). The <μ> values for picene-(C14H29)2 thin-film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm2 V(-1) s(-1), and the lowest absolute threshold voltage, |Vth|, (5.2 V) was recorded with a PZT gate dielectric; the average |Vth| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)2 FET was also fabricated with an SiO2 gate dielectric, yielding μ=3.4×10(-2) cm2 V(-1) s(-1). These results verify the effectiveness of picene-(C14H29)2 for electronics applications.
场效应晶体管 (FET) 是使用 3,10-二十四烷基并苯，即并苯-(C14H29)2 的薄膜制成的，可以通过热沉积或溶液沉积（溶液法）来形成。所有 FET 均表现出 p 型常关特性。在具有 PbZr0.52Ti0.48O3（PZT）栅介质的并苯-(C14H29)2 薄膜 FET 中，场效应迁移率 μ 达到约 21 cm2 V(-1) s(-1)，这是有机薄膜 FET 中记录到的最高 μ 值；从 12 个 FET 器件评估的平均 μ 值 (<μ>) 为 14(4) cm2 V(-1) s(-1)。具有其他栅介质（如 SiO2、Ta2O5、ZrO2 和 HfO2）的并苯-(C14H29)2 薄膜 FET 的 <μ> 值大于 5 cm2 V(-1) s(-1)，并且具有 PZT 栅介质时记录到的最低绝对值阈值电压 |Vth|（5.2 V）；PZT 栅介质的平均 |Vth| 为 7(1) V。用 SiO2 栅介质还制备了溶液处理的并苯-(C14H29)2 FET，得到 μ=3.4×10(-2) cm2 V(-1) s(-1)。这些结果验证了并苯-(C14H29)2 用于电子应用的有效性。
Zotero 插件