Department of Chemistry, Okayama University, Okayama 700-8530, Japan.
Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
Sci Rep. 2014 Jun 17;4:5330. doi: 10.1038/srep05330.
A new phenacene-type molecule, [8]phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy π-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8]phenacene and its FET application. An [8]phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest μ achieved in an [8]phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm(2) V(-1) s(-1), demonstrating excellent FET characteristics; the average μ was evaluated as 1.2(3) cm(2) V(-1) s(-1). The μ value in the [8]phenacene electric-double-layer FET reached 16.4 cm(2) V(-1) s(-1), which is the highest reported in EDL FETs based on phenacene-type molecules; the average μ was evaluated as 8(5) cm(2) V(-1) s(-1). The μ values recorded in this study show that [8]phenacene is a promising molecule for transistor applications.
一种新的菲并型分子 [8]phenacene 已被合成，用于有机场效应晶体管 (FET)。该分子由八个苯环组成的菲并核组成，具有较长的π共轭体系。结构通过元素分析、固态 NMR、X 射线衍射 (XRD) 图谱、吸收光谱和光电子产额光谱 (PYS) 得到验证。这种类型的分子不仅在纯化学方面很有趣，而且在潜在的电子应用方面也很有前途。在这里，我们报告了 [8]phenacene 的物理性质及其 FET 应用。使用 SiO2 栅介质制造的 [8]phenacene 薄膜 FET 显示出清晰的 p 沟道特性。在具有 SiO2 栅介质的 [8]phenacene 薄膜 FET 中获得的最高 μ 值为 1.74 cm2 V-1 s-1，表现出优异的 FET 特性；平均 μ 值评估为 1.2(3) cm2 V-1 s-1。在 [8]phenacene 电双层 FET 中，μ 值达到 16.4 cm2 V-1 s-1，这是基于菲并型分子的 EDL FET 中报道的最高值；平均 μ 值评估为 8(5) cm2 V-1 s-1。本研究记录的 μ 值表明 [8]phenacene 是一种有前途的晶体管应用分子。
