Okamoto Hideki, Hamao Shino, Eguchi Ritsuko, Goto Hidenori, Takabayashi Yasuhiro, Yen Paul Yu-Hsiang, Liang Luo Uei, Chou Chia-Wei, Hoffmann Germar, Gohda Shin, Sugino Hisako, Liao Yen-Fa, Ishii Hirofumi, Kubozono Yoshihiro
Department of Chemistry, Okayama University, Okayama, 700-8530, Japan.
Research Institute for Interdisciplinary Science, Okayama University, Okayama, 700-8530, Japan.
Sci Rep. 2019 Mar 8;9(1):4009. doi: 10.1038/s41598-019-39899-4.
The [10]phenacene and [11]phenacene molecules have been synthesized using a simple repetition of Wittig reactions followed by photocyclization. Sufficient amounts of [10]phenacene and [11]phenacene were obtained, and thin-film FETs using these molecules have been fabricated with SiO and ionic liquid gate dielectrics. These FETs operated in p-channel. The averaged measurements of field-effect mobility, <μ>, were 3.1(7) × 10 and 1.11(4) × 10 cm V s, respectively, for [10]phenacene and [11]phenacene thin-film FETs with SiO gate dielectrics. Furthermore, [10]phenacene and [11]phenacene thin-film electric-double-layer (EDL) FETs with ionic liquid showed low-voltage p-channel FET properties, with <μ> values of 3(1) and 1(1) cm V s, respectively. This study also discusses the future utility of the extremely extended π-network molecules [10]phenacene and [11]phenacene as the active layer of FET devices, based on the experimental results obtained.
通过简单重复维蒂希反应然后进行光环化反应,合成了并十苯和并十一苯分子。获得了足够量的并十苯和并十一苯,并使用这些分子制备了具有SiO和离子液体栅极电介质的薄膜场效应晶体管(FET)。这些FET以p沟道模式工作。对于具有SiO栅极电介质的并十苯和并十一苯薄膜FET,场效应迁移率的平均测量值<μ>分别为3.1(7)×10和1.11(4)×10 cm² V⁻¹ s⁻¹。此外,具有离子液体的并十苯和并十一苯薄膜双电层(EDL)FET表现出低压p沟道FET特性,<μ>值分别为3(1)和1(1) cm² V⁻¹ s⁻¹。基于所获得的实验结果,本研究还讨论了极长π网络分子并十苯和并十一苯作为FET器件有源层的未来应用前景。