Haab Anna, Mikulics Martin, Sutter Eli, Jin Jiehong, Stoica Toma, Kardynal Beata, Rieger Torsten, Grützmacher Detlev, Hardtdegen Hilde
Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany. Jülich-Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany.
Nanotechnology. 2014 Jun 27;25(25):255301. doi: 10.1088/0957-4484/25/25/255301. Epub 2014 Jun 4.
The formation of nanowires (NWs) by reactive ion etching (RIE) of maskless GaN layers was investigated. The morphological, structural and optical characteristics of the NWs were studied and compared to those of the layer they evolve from. It is shown that the NWs are the result of a defect selective etching process. The evolution of density and length with etching time is discussed. Densely packed NWs with a length of more than 1 μm and a diameter of ∼60 nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The NWs are predominantly free of threading dislocations and show an improvement of optical properties compared to their layer counterpart. The production of NWs via a top down process on non-masked group III-nitride layers is assessed to be very promising for photovoltaic applications.
研究了通过对无掩膜GaN层进行反应离子蚀刻（RIE）来形成纳米线（NWs）。研究了NWs的形态、结构和光学特性，并将其与它们所衍生的层的特性进行了比较。结果表明，NWs是缺陷选择性蚀刻过程的产物。讨论了密度和长度随蚀刻时间的变化。通过对约2.5μm厚的GaN层进行RIE，获得了长度超过1μm、直径约60nm的密集排列的NWs。NWs主要没有穿线位错，并且与它们的层对应物相比，光学性能有所改善。通过自上而下的工艺在未掩膜的III族氮化物层上生产NWs被认为在光伏应用中非常有前景。
