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通过分子束外延和金属辅助光化学蚀刻生长的铟(镓)氮纳米结构及器件

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching.

作者信息

Soopy Abdul Kareem K, Li Zhaonan, Tang Tianyi, Sun Jiaqian, Xu Bo, Zhao Chao, Najar Adel

机构信息

Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE.

Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

出版信息

Nanomaterials (Basel). 2021 Jan 7;11(1):126. doi: 10.3390/nano11010126.

DOI:10.3390/nano11010126
PMID:33430484
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7827665/
Abstract

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

摘要

本综述总结了近期关于氮化物纳米结构及其应用的研究。我们涵盖了通过金属辅助光化学蚀刻和分子束外延在多孔结构和低维氮化物纳米结构的合成与生长方面的最新进展。详细讨论了在各种衬底上生长氮化物材料,这提高了它们的晶体质量、掺杂效率和调节性能的灵活性。此外,还介绍了In(Ga)N纳米结构应用(发光二极管、激光器和气体传感器)的最新进展。最后,阐述了该领域的挑战和发展方向。

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RSC Adv. 2019 May 14;9(26):14937-14943. doi: 10.1039/c9ra01188a. eCollection 2019 May 9.
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PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments.通过飞秒脉冲激光烧蚀在不同环境中合成PL可调谐氮化镓纳米颗粒
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High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel.
具有局部击穿导电通道的高性能平面型氮化铟镓基发光二极管。
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