Hatch John Byron, Whittaker-Brooks Luisa, Wu Tai-Lung, Long Gen, Zeng Hao, Sambandamurthy G, Banerjee Sarbajit, Luo Hong
Department of Physics, University at Buffalo, 239 Fronczak Hall, Buffalo, New York, USA.
Phys Chem Chem Phys. 2014 Jul 21;16(27):14183-8. doi: 10.1039/c4cp01551g. Epub 2014 Jun 9.
This investigation focuses on the formation of nanoscale puddles of an intermediate metallic phase (IMP) in the metal-insulator transition (MIT) temperature regime of single-crystalline vanadium dioxide (VO2) nanowires. The electronic structure of VO2 nanowires was examined with scanning tunneling spectroscopy. The evolution of the local density of states of individual nanowires throughout the MIT regime is presented with differential tunneling conductance spectra and images measured as the temperature was increased. Our results show that the formation of an IMP plays an important role in the MIT of intrinsic VO2.
本研究聚焦于在单晶二氧化钒（VO₂）纳米线的金属-绝缘体转变（MIT）温度范围内中间金属相（IMP）纳米级水坑的形成。利用扫描隧道光谱对VO₂纳米线的电子结构进行了研究。通过在升温过程中测量的微分隧道电导谱和图像，展示了各个纳米线在整个MIT区域的局域态密度的演变。我们的结果表明，IMP的形成在本征VO₂的MIT中起着重要作用。
