Zhou Shuang, Su Yaorong, Xiao Yubin, Zhao Ni, Xu Jianbin, Wong Chingping
Nanotechnology. 2014 Jul 4;25(26):265201. doi: 10.1088/0957-4484/25/26/265201. Epub 2014 Jun 11.
In this study, a solution-processed bilayer high-k dielectric (Al2O(y)/TiO(x), abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm(2) V(-1) s(-1) and electron mobility of 3232 cm(2) V(-1) s(-1) were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.
在本研究中，采用溶液法制备的双层高介电常数电介质（Al2O(y)/TiO(x)，缩写为ATO）来实现石墨烯场效应晶体管（GFET）的低电压工作，其中石墨烯通过大气压化学气相沉积（APCVD）生长。通过用十八烷基膦酸（ODPA）修饰石墨烯与电介质之间的界面，在真空中-3.0 V至3.0 V的小栅极电压范围内，获得了高达5805 cm² V⁻¹ s⁻¹的出色室温空穴迁移率和3232 cm² V⁻¹ s⁻¹的电子迁移率。同时，实现了约8的优异开/关电流比。我们的研究证明了一条有效途径，即利用低温溶液法制备的电介质可以实现低电压、高性能的GFET。
