International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Nanoscale. 2014 Jul 21;6(14):8084-90. doi: 10.1039/c4nr00963k.
CdS/ZnO branched heterostructures have been successfully synthesized by combining thermal vapour deposition and a hydrothermal method. Drastic optoelectronic performance enhancement of such heterostructures was revealed, compared to plain CdS nanobelts, as documented by comparative in situ optoelectronic studies on corresponding individual nanostructures using an originally designed laser-compatible transmission electron microscopy (TEM) technique. Furthermore, flexible thin-film based photodetectors based on standard CdS nanobelts and newly prepared CdS/ZnO heterostructures were fabricated on PET substrates, and comparative photocurrent and photo-responsivity measurements thoroughly verified the in situ TEM results. The CdS/ZnO branched heterostructures were found to have better performance than standard CdS nanobelts for optoelectronic applications with respect to the photocurrent to dark current ratio and responsivity.
CdS/ZnO 树枝状异质结构是通过热气相沉积和水热法相结合成功合成的。与普通的 CdS 纳米带相比,这种异质结构的光电性能得到了显著提高,这一点通过使用原创设计的激光兼容透射电子显微镜 (TEM) 技术对相应的单个纳米结构进行的原位光电研究得到了证明。此外,基于标准 CdS 纳米带和新制备的 CdS/ZnO 异质结构的柔性薄膜基光电探测器在 PET 衬底上进行了制备,并通过比较光电流和光响应度测量,彻底验证了原位 TEM 结果。CdS/ZnO 树枝状异质结构在光电应用方面的性能优于标准 CdS 纳米带,表现为光电流与暗电流比和响应度。