Lee Sangyeob, Cho Kyung Soo, Song Soomin, Kim Kihwan, Eo Young-Joo, Yun Jae Ho, Gwak Jihye, Chung Choong-Heui
Department of Materials Science and Engineering, Hanbat National University; Department of Materials and Manufacturing Engineering, Hanbat National University.
Department of Materials and Manufacturing Engineering, Hanbat National University.
J Vis Exp. 2019 Jul 19(149). doi: 10.3791/59909.
Silver nanowire transparent electrodes have been employed as window layers for Cu(In,Ga)Se2 thin-film solar cells. Bare silver nanowire electrodes normally result in very poor cell performance. Embedding or sandwiching silver nanowires using moderately conductive transparent materials, such as indium tin oxide or zinc oxide, can improve cell performance. However, the solution-processed matrix layers can cause a significant number of interfacial defects between transparent electrodes and the CdS buffer, which can eventually result in low cell performance. This manuscript describes how to fabricate robust electrical contact between a silver nanowire electrode and the underlying CdS buffer layer in a Cu(In,Ga)Se2 solar cell, enabling high cell performance using matrix-free silver nanowire transparent electrodes. The matrix-free silver nanowire electrode fabricated by our method proves that the charge-carrier collection capability of silver nanowire electrode-based cells is as good as that of standard cells with sputtered ZnO:Al/i-ZnO as long as the silver nanowires and CdS have high-quality electrical contact. The high-quality electrical contact was achieved by depositing an additional CdS layer as thin as 10 nm onto the silver nanowire surface.
银纳米线透明电极已被用作铜铟镓硒（Cu(In,Ga)Se2）薄膜太阳能电池的窗口层。裸露的银纳米线电极通常会导致电池性能非常差。使用中等导电性的透明材料（如氧化铟锡或氧化锌）嵌入或夹在银纳米线之间，可以提高电池性能。然而，溶液处理的基体层会在透明电极和硫化镉（CdS）缓冲层之间产生大量界面缺陷，最终可能导致电池性能低下。本论文描述了如何在Cu(In,Ga)Se2太阳能电池中，在银纳米线电极与下面的CdS缓冲层之间制造稳固的电接触，从而使用无基体的银纳米线透明电极实现高电池性能。通过我们的方法制造的无基体银纳米线电极证明，只要银纳米线和CdS具有高质量的电接触，基于银纳米线电极的电池的电荷载流子收集能力与具有溅射ZnO:Al/i-ZnO的标准电池一样好。通过在银纳米线表面沉积一层仅10纳米厚的额外CdS层，实现了高质量的电接触。
