Wang Xufeng, Khan Mohammad Ryyan, Lundstrom Mark, Bermel Peter
Opt Express. 2014 Mar 10;22 Suppl 2:A344-58. doi: 10.1364/OE.22.00A344.
GaAs nanowires (NWs) offer the possibility of decoupling light absorption from charge transport for high-performance photovoltaic (PV) devices. However, it is still an open question as to whether these devices can exceed the Shockley-Queisser efficiency limit for single-junction PV. In this work, single standing GaAs-based nanowire solar cells in both radial and vertical junction configurations is analyzed and compared to a planar thin-film design. By using a self-consistent, electrical-optically coupled 3D simulator, we show the design principles for nanowire and planar solar cells are significantly different; nanowire solar cells are vulnerable to surface and contact recombination, while planar solar cells suffer significant losses due to imperfect backside mirror reflection. Overall, the ultimate efficiency of the GaAs nanowire solar cell with radial and vertical junction is not expected to exceed that of the thin-film design, with both staying below the Shockley-Queisser limit.
砷化镓纳米线（NWs）为高性能光伏（PV）器件实现光吸收与电荷传输的解耦提供了可能性。然而，这些器件能否超越单结光伏的肖克利-奎塞尔效率极限仍是一个悬而未决的问题。在这项工作中，对径向和垂直结配置的单根直立式砷化镓基纳米线太阳能电池进行了分析，并与平面薄膜设计进行了比较。通过使用自洽的电光耦合三维模拟器，我们表明纳米线和平面太阳能电池的设计原理有显著差异；纳米线太阳能电池易受表面和接触复合的影响，而平面太阳能电池则因背面镜反射不完善而遭受重大损失。总体而言，具有径向和垂直结的砷化镓纳米线太阳能电池的最终效率预计不会超过薄膜设计，两者均低于肖克利-奎塞尔极限。
