Wen Shih-Yi, Hu Hung-Lieh, Tsai Yao-Jun, Hsu Chen-Peng, Lin Re-Ching, Horng Ray Hua
Opt Express. 2014 May 5;22 Suppl 3:A601-6. doi: 10.1364/OE.22.00A601.
This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm² LED chip size.
本研究通过集成LED芯片和基于硅的封装工艺，提出了一种用于垂直薄氮化镓LED应用的新型封装结构。垂直薄膜LED直接安装在封装基座上。从结到封装基座的最短热路径结构实现了LED封装的最低热阻，为1.65 K/W。实验结果表明，低热阻显著提高了正向电流，对于1.125×1.125 mm²的LED芯片尺寸，正向电流高达4.6A。
