硅量子点超晶格太阳能电池结构，包括光电发生层中的硅纳米晶体。

Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer.

机构信息

Department of Physical Electronics, Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan.

Department of Physical Electronics, Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan ; Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan.

出版信息

Nanoscale Res Lett. 2014 May 20;9(1):246. doi: 10.1186/1556-276X-9-246. eCollection 2014.

DOI:10.1186/1556-276X-9-246

PMID:24936160

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4047263/

Abstract

UNLABELLED

The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon.

PACS

85.35.Be; 84.60.Jt; 78.67.Bf.

摘要

无标签

在石英衬底上制备了 n 型多晶硅/嵌入非晶硅氧碳基质（30 层）中的 5nm 直径硅纳米晶/p 型氢化非晶硅/Al 电极的太阳能电池结构。太阳能电池的开路电压和填充因子分别为 518mV 和 0.51。太阳能电池的吸收边缘为 1.49eV，对应于硅纳米晶材料的光学带隙，表明有可能用带隙大于晶体硅的硅纳米晶材料制造太阳能电池。