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模板介导的半导体聚合物中的纳晶网络。

Template-mediated nano-crystallite networks in semiconducting polymers.

机构信息

1] Gwangju Institute of Science and Technology (GIST), School of Materials Science and Engineering (SMSE), Gwangju 500-712, Korea [2] Heeger Center for Advanced Materials (HCAM), Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea.

1] Heeger Center for Advanced Materials (HCAM), Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea [2] Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea.

出版信息

Nat Commun. 2014 Jun 18;5:4183. doi: 10.1038/ncomms5183.

DOI:10.1038/ncomms5183
PMID:24939244
Abstract

Unlike typical inorganic semiconductors with a crystal structure, the charge dynamics of π-conjugated polymers (π-CPs) are severely limited by the presence of amorphous portions between the ordered crystalline regions. Thus, the formation of interconnected pathways along crystallites of π-CPs is desired to ensure highly efficient charge transport in printable electronics. Here we report the formation of nano-crystallite networks in π-CP films by employing novel template-mediated crystallization (TMC) via polaron formation and electrostatic interaction. The lateral and vertical charge transport of TMC-treated films increased by two orders of magnitude compared with pristine π-CPs. In particular, because of the unprecedented room temperature and solution-processing advantages of our TMC method, we achieve a field-effect mobility of 0.25 cm(2) V(-1) s(-1) using a plastic substrate, which corresponds to the highest value reported thus far. Because our findings can be applied to various π-conjugated semiconductors, our approach is universal and is expected to yield high-performance printable electronics.

摘要

与具有晶体结构的典型无机半导体不同,π-共轭聚合物(π-CP)的电荷动力学严重受到有序晶区之间无定形部分的存在的限制。因此,希望在π-CP 晶体颗粒中形成相互连接的路径,以确保在可印刷电子产品中实现高效的电荷传输。在这里,我们通过采用通过极化子形成和静电相互作用的新型模板介导结晶(TMC),在 π-CP 薄膜中形成纳米晶网络。与原始的 π-CP 相比,TMC 处理后的薄膜的横向和垂直电荷传输增加了两个数量级。特别是,由于我们的 TMC 方法具有前所未有的室温优势和溶液处理优势,我们使用塑料衬底实现了 0.25 cm(2) V(-1) s(-1) 的场效应迁移率,这是迄今为止报道的最高值。由于我们的发现可以应用于各种 π-共轭半导体,因此我们的方法是通用的,有望产生高性能的可印刷电子产品。

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