Kim Yejin, Ahn Hyungju, Yoo Dahyeon, Sung Mingi, Yoo Hyeonjin, Park Sohee, Lee Junghoon, Lee Byoung Hoon
Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul, 03760, Republic of Korea.
Pohang Accelerator Laboratory, POSTECH, Pohang, 37673, Republic of Korea.
Adv Sci (Weinh). 2023 Aug;10(22):e2302683. doi: 10.1002/advs.202302683. Epub 2023 May 25.
Despite the emerging scientific interest in polymer-based stretchable electronics, the trade-off between the crystallinity and stretchability of intrinsically stretchable polymer semiconductors-charge-carrier mobility increases as crystallinity increases while stretchability decreases-hinders the development of high-performance stretchable electronics. Herein, a highly stretchable polymer semiconductor is reported that shows concurrently improved thin film crystallinity and stretchability upon thermal annealing. The polymer thin films annealed at temperatures higher than their crystallization temperatures exhibit substantially improved thin film stretchability (> 200%) and hole mobility (≥ 0.2 cm V s ). The simultaneous enhancement of the crystallinity and stretchability is attributed to the thermally-assisted structural phase transition that allows the formation of edge-on crystallites and reinforces interchain noncovalent interactions. These results provide new insights into how the current crystallinity-stretchability limitation can be overcome. Furthermore, the results will facilitate the design of high-mobility stretchable polymer semiconductors for high-performance stretchable electronics.
尽管基于聚合物的可拉伸电子产品在科学领域正逐渐受到关注,但本征可拉伸聚合物半导体的结晶度与拉伸性之间的权衡——随着结晶度增加,电荷载流子迁移率提高而拉伸性降低——阻碍了高性能可拉伸电子产品的发展。在此,报道了一种高度可拉伸的聚合物半导体,其在热退火后同时展现出改善的薄膜结晶度和拉伸性。在高于其结晶温度的温度下退火的聚合物薄膜表现出显著改善的薄膜拉伸性(> 200%)和空穴迁移率(≥ 0.2 cm² V⁻¹ s⁻¹)。结晶度和拉伸性的同时增强归因于热辅助结构相变,该相变允许形成边缘取向的微晶并增强链间非共价相互作用。这些结果为如何克服当前结晶度 - 拉伸性限制提供了新的见解。此外,这些结果将有助于设计用于高性能可拉伸电子产品的高迁移率可拉伸聚合物半导体。