Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and ENS Cachan, UPR CNRS 3321, 91405 Orsay, France. Laboratoire de Photonique Quantique et Moléculaire, ENS Cachan and CNRS, UMR CNRS 8537, 94235 Cachan, France.
Institut d'Electronique Fondamentale, Université Paris-Sud and CNRS, UMR CNRS 8622, 91405 Orsay, France.
Science. 2014 Jun 20;344(6190):1366-9. doi: 10.1126/science.1250113.
The control of domain walls in magnetic wires underpins an emerging class of spintronic devices. Propagation of these walls in imperfect media requires defects that pin them to be characterized on the nanoscale. Using a magnetic microscope based on a single nitrogen-vacancy (NV) center in diamond, we report domain-wall imaging on a 1-nanometer-thick ferromagnetic nanowire and directly observe Barkhausen jumps between two pinning sites spaced 50 nanometers apart. We further demonstrate in situ laser control of these jumps, which allows us to drag the domain wall along the wire and map the pinning landscape. Our work demonstrates the potential of NV microscopy to study magnetic nano-objects in complex media, whereas controlling domain walls with laser light may find an application in spintronic devices.
在磁性导丝中控制畴壁是一类新兴的自旋电子器件的基础。这些壁在非理想介质中的传播需要缺陷来将其固定在纳米尺度上进行特征描述。我们使用基于金刚石中单个氮空位（NV）中心的磁显微镜，在 1 纳米厚的铁磁纳米线中进行畴壁成像，并直接观察到两个间隔 50 纳米的钉扎点之间的巴克豪森跳跃。我们进一步展示了对这些跳跃的原位激光控制，这使我们能够沿着导线拖动畴壁并绘制钉扎景观。我们的工作表明 NV 显微镜具有研究复杂介质中磁性纳米物体的潜力，而用激光控制畴壁可能会在自旋电子器件中找到应用。
