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纳米尺度金属夹杂物在电介质中的电化学动力学。

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.

机构信息

Department of Electrical Engineering and Computer Science, the University of Michigan, Ann Arbor, Michigan 48109, USA.

1] Department of Materials Science and Engineering, the University of Michigan, Ann Arbor, Michigan 48109, USA [2].

出版信息

Nat Commun. 2014 Jun 23;5:4232. doi: 10.1038/ncomms5232.

Abstract

Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate that nanoscale inclusions (for example, clusters) in dielectrics dynamically change their shape, size and position upon applied electric field. Through systematic in situ transmission electron microscopy studies, we show that fundamental electrochemical processes can lead to universally observed nucleation and growth of metal clusters, even for inert metals like platinum. The clusters exhibit diverse dynamic behaviours governed by kinetic factors including ion mobility and redox rates, leading to different filament growth modes and structures in memristive devices. These findings reveal the microscopic origin behind resistive switching, and also provide general guidance for the design of novel devices involving electronics and ionics.

摘要

纳米尺度的金属包含物在固态电介质中或其表面是现代电催化、光电、电容器、超材料和存储器件的重要组成部分。这些复合系统的性能强烈依赖于包含物的尺寸、分散度和化学稳定性,而这些通常被认为是常数。在这里,我们证明了电介质中的纳米尺度包含物(例如团簇)在施加电场时会动态地改变其形状、尺寸和位置。通过系统的原位透射电子显微镜研究,我们表明,基本的电化学过程可以导致金属团簇普遍观察到的成核和生长,即使对于像铂这样的惰性金属也是如此。团簇表现出多种动态行为,这些行为受动力学因素的控制,包括离子迁移率和氧化还原速率,从而导致忆阻器件中不同的细丝生长模式和结构。这些发现揭示了电阻开关背后的微观起源,也为涉及电子学和离子学的新型器件的设计提供了一般性指导。

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