Qin Lanhao, Guan Pengfei, Shao Jiefan, Xiao Yu, Yu Yimeng, Su Jie, Zhang Conghui, Li Yanyong, Liu Shenghong, Li Pengyu, Ouyang Decai, He Wenke, Liu Fenghao, Zhu Kaichen, Liu Kailang, Yao Zhenpeng, Wu Jinsong, Zhao Yinghe, Li Huiqiao, Hui Fei, Lin Peng, Lanza Mario, Li Yuan, Zhai Tianyou
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.
College of Computer Science and Technology, State Key Laboratory of Brain Machine Intelligence, Zhejiang University, Hangzhou, China.
Nat Nanotechnol. 2025 Sep 17. doi: 10.1038/s41565-025-02013-z.
Memristors have emerged as a promising hardware platform for in-memory computing, but many current devices suffer from channel material degradation during repeated resistive switching. This leads to high energy consumption and limited endurance. Here we introduce a molecular crystal memristor, of which the representative channel material, SbO, possesses a molecular crystal structure where molecular cages are interconnected via van der Waals forces. This unique configuration allows ions to migrate through intermolecular spaces with relatively low energy input, preserving the integrity of the crystal structure even after extensive switching cycles. Our molecular crystal memristor thus exhibits low energy consumption of 26 zJ per operation, with prominent endurance surpassing 10 switching cycles. The device delivers both reconfigurable non-volatile and volatile resistive switching behaviours over a broad range of device scales, from micrometres down to nanometres. Furthermore, we establish the scalability of this technology by fabricating large crossbar arrays on an 8 inch wafer. This enables the successful implementation of reservoir computing on a single CMOS-integrated chip using these memristors, achieving 100% accuracy in dynamic vision recognition.
忆阻器已成为一种有前途的内存计算硬件平台,但目前许多设备在反复进行电阻开关过程中存在通道材料退化问题。这导致高能耗和有限的耐久性。在此,我们介绍一种分子晶体忆阻器,其代表性通道材料SbO具有分子晶体结构,分子笼通过范德华力相互连接。这种独特的结构允许离子以相对较低的能量输入在分子间空间迁移,即使经过大量开关循环后仍能保持晶体结构的完整性。因此,我们的分子晶体忆阻器每次操作展现出26 zJ的低能耗,具有超过10次开关循环的显著耐久性。该器件在从微米到纳米的广泛器件尺度范围内都具有可重构的非易失性和易失性电阻开关行为。此外,我们通过在8英寸晶圆上制造大型交叉阵列来确立这项技术的可扩展性。这使得使用这些忆阻器在单个CMOS集成芯片上成功实现储层计算,在动态视觉识别中达到100%的准确率。