二氧化钒纳米线的自组装与横向取向生长

Cheng Chun, Guo Hua, Amini Abbas, Liu Kai, Fu Deyi, Zou Jian, Song Haisheng

Department of Materials Science and Engineering, South University of Science and Technology, Shenzhen 518055, China.

National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

Sci Rep. 2014 Jun 26;4:5456. doi: 10.1038/srep05456.

Single-crystalline vanadium dioxide (VO2) nanostructures have attracted an intense research interest recently because of their unique single-domain metal-insulator phase transition property. Synthesis of these nanostructures in the past was limited in density, alignment, or single-crystallinity. The assembly of VO2 nanowires (NWs) is desirable for a "bottom-up" approach to the engineering of intricate structures using nanoscale building blocks. Here, we report the successful synthesis of horizontally aligned VO2 NWs with a dense growth mode in the [1-100]quartz direction of a polished x-cut quartz surface using a simple vapor transport method. Our strategy of controlled growth of VO2 NWs promisingly paves the way for designing novel metal-insulator transition devices based on VO2 NWs.

单晶二氧化钒（VO₂）纳米结构因其独特的单畴金属-绝缘体相变特性，近年来引起了广泛的研究兴趣。过去，这些纳米结构的合成在密度、排列或单晶性方面受到限制。利用纳米级构建块，通过“自下而上”的方法来构建复杂结构，VO₂纳米线（NWs）的组装是很有必要的。在此，我们报告了一种简单的气相传输方法，成功地在抛光的x切割石英表面的[1-100]石英方向上，以密集生长模式合成了水平排列的VO₂纳米线。我们控制VO₂纳米线生长的策略有望为基于VO₂纳米线的新型金属-绝缘体转变器件的设计铺平道路。