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基于π-扩展苯并二噻吩的高迁移率聚合物及其在快速开关晶体管和高增益光电导体中的应用。

High mobility polymer based on a π-extended benzodithiophene and its application for fast switching transistor and high gain photoconductor.

作者信息

Park Sungmin, Lim Byung Tack, Kim BongSoo, Son Hae Jung, Chung Dae Sung

机构信息

1] Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul, 136-791, Republic of Korea [2] Department of Chemistry, Korea University, Seoul 136-713, Republic of Korea.

School of Chemical Engineering and Material Science, Chung-Ang University, Seoul, 156-756, Korea.

出版信息

Sci Rep. 2014 Jun 27;4:5482. doi: 10.1038/srep05482.

Abstract

Here we present synthesis and electronic properties of a new alternating copolymer composed of dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene (DTBDT) and diketopyrrolopyrrole units, poly dithienobenzodithiophene-co-diketopyrrolopyrrolebithiophene (PDPDBD). The resulting polymer showed hysteresis free, fast switching and highly reliable organic thin-film transistor properties comparable to a-Si. Hole mobility of the polymer is about 2.7 cm(2)V(-1)s(-1), which is remarkably improved compared with its benzodithiophene (BDT)-analougue that contains a smaller aromatic ring of BDT in the place of DTBDT. This is mainly due to much increased intramolecular charge transport originated from PDPDBD's rigid molecular backbone. Furthermore, photoconductor devices fabricated by using PDPDBD as an active layer showed a high performance with the highest photoconductive gain of ~10(5). Taken together, the successful PDPDBD's transistor and photoconductor performances with high device stability demonstrated practical applicability of PDPDBD in low-cost and flexible optoelectronic devices.

摘要

在此,我们展示了一种由二噻吩并[2,3 - d;2',3'-d']苯并[1,2 - b;4,5 - b']二噻吩(DTBDT)和二酮吡咯并吡咯单元组成的新型交替共聚物——聚二噻吩并苯并二噻吩 - 共 - 二酮吡咯并吡咯二噻吩(PDPDBD)的合成及其电子性质。所得聚合物表现出无滞后、快速开关以及与非晶硅相当的高度可靠的有机薄膜晶体管特性。该聚合物的空穴迁移率约为2.7 cm²V⁻¹s⁻¹,如果将其苯并二噻吩(BDT)类似物中的BDT小芳香环替换为DTBDT,聚合物的空穴迁移率会显著提高。这主要归因于PDPDBD刚性分子主链引起的分子内电荷传输大幅增加。此外,以PDPDBD作为活性层制备的光电导器件表现出高性能,最高光电导增益约为10⁵。综上所述,PDPDBD成功的晶体管和光电导性能以及高器件稳定性证明了PDPDBD在低成本和柔性光电器件中的实际应用价值。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a950/4073171/132fad4d2fb4/srep05482-f1.jpg

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