Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom.
Nano Lett. 2014 Aug 13;14(8):4542-7. doi: 10.1021/nl501565b. Epub 2014 Jul 2.
The growth of self-catalyzed ternary core-shell GaAsP nanowire (NW) arrays on SiO2 patterned Si(111) substrates has been demonstrated by using solid-source molecular beam epitaxy. A high-temperature deoxidization step up to ∼ 900 °C prior to NW growth was used to remove the native oxide and/or SiO2 residue from the patterned holes. To initiate the growth of GaAsP NW arrays, the Ga predeposition used for assisting the formation of Ga droplets in the patterned holes, was shown to be another essential step. The effects of the patterned-hole size on the NW morphology were also studied and explained using a simple growth model. A lattice-matched radial GaAsP core-shell NW structure has subsequently been developed with room-temperature photoluminescence emission around 740 nm. These results open up new perspectives for integrating position-controlled III-V NW photonic and electronic structures on a Si platform.
采用固态源分子束外延法，在 SiO2 图案化 Si(111) 衬底上成功生长了自催化三元核壳 GaAsP 纳米线（NW）阵列。在 NW 生长之前，采用高达约 900°C 的高温脱氧步骤，以去除图案化孔中的本征氧化物和/或 SiO2 残留物。为了开始 GaAsP NW 阵列的生长，用于辅助图案化孔中 Ga 液滴形成的 Ga 预沉积被证明是另一个必要步骤。还使用简单的生长模型研究并解释了图案化孔尺寸对 NW 形态的影响。随后开发了具有晶格匹配的径向 GaAsP 核壳 NW 结构，室温下的光致发光发射约为 740nm。这些结果为在 Si 平台上集成位置可控的 III-V NW 光子和电子结构开辟了新的前景。
