通过预沉积镓提高硅上砷化镓纳米线的产量。

Improving the yield of GaAs nanowires on silicon by Ga pre-deposition.

作者信息

Wilson D P, Dubrovskii V G, LaPierre R R

机构信息

Department of Engineering Physics, McMaster University, Hamilton, ON L8S4L7, Canada.

Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034, St. Petersburg, Russia.

出版信息

Nanotechnology. 2021 Apr 6;32(26). doi: 10.1088/1361-6528/abef93.

DOI:10.1088/1361-6528/abef93

PMID:33730697

Abstract

GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.

摘要

采用分子束外延法，以镓液滴作为籽晶颗粒，通过自辅助气-液-固方法生长砷化镓纳米线（NW）阵列。研究了镓预沉积步骤以控制NW产率和直径。合适的镓预沉积步骤持续时间可提高NW产率，但NW产率高度依赖于氧化孔洞直径和表面条件。NW直径由NW侧壁上的气-固生长决定，而非镓预沉积。有镓预沉积步骤时的最大NW产率非常接近100%，在较短的镓沉积持续时间和较大孔洞情况下得以确立。在一个模型中解释了这种趋势，即当镓液滴体积近似等于孔洞体积时可获得最大产率。