Institute for Experimental and Applied Physics, University of Regensburg, Regensburg, Germany.
Nanotechnology. 2010 Oct 29;21(43):435601. doi: 10.1088/0957-4484/21/43/435601. Epub 2010 Sep 29.
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO(2) layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.
砷化镓纳米线是通过分子束外延技术，使用自催化、镓辅助生长技术生长的。通过在 SiO2 层上纳米图案化具有 85nm 孔径和 200nm 至 2μm 之间孔间距的孔阵列来实现位置控制。镓液滴优先在作为纳米线生长催化剂的蚀刻孔处形成。纳米线具有{110}侧面对称的六边形横截面，并主要在闪锌矿中结晶。纳米线生长速率的间隔依赖性表明，对于大孔距离抑制 NW 生长的情况，III/V 比朝着富砷条件发生变化。
