Cheng J L, Vermeulen N, Sipe J E
Opt Express. 2014 Jun 30;22(13):15868-76. doi: 10.1364/OE.22.015868.
We calculate the dc current induced second harmonic generation in doped graphene using the semiconductor Bloch equations under relaxation time approximations. We find that the maximum value of the effective second order susceptibility appears when the fundamental photon energy matches the chemical potential. For a surface current density 1.1 × 10(3) A/m and a relaxation time at optical frequencies of 13 fs, the effective second order susceptibility χeff(2);xxx can be as large as 10(-7)m/V for h̄ω = 0.2 eV or 10(-8) m/V for h̄ω = 0.53 eV.
我们在弛豫时间近似下，使用半导体布洛赫方程计算了掺杂石墨烯中直流电流诱导的二次谐波产生。我们发现，当基频光子能量与化学势匹配时，有效二阶极化率出现最大值。对于表面电流密度为1.1×10³ A/m以及光频率下的弛豫时间为13 fs的情况，对于ħω = 0.2 eV，有效二阶极化率χeff(2);xxx可高达10⁻⁷ m/V，对于ħω = 0.53 eV则为10⁻⁸ m/V。
