Lee Kwang Jae, Chun Jaeyi, Kim Sang-Jo, Oh Semi, Ha Chang-Soo, Park Jung-Won, Lee Seung-Jae, Song Jae-Chul, Baek Jong Hyeob, Park Seong-Ju
Opt Express. 2016 Mar 7;24(5):4391-4398. doi: 10.1364/OE.24.004391.
We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.
我们报道了在具有嵌入式纳米多孔（NP）GaN层的硅（111）衬底上生长InGaN/GaN多量子阱蓝光发光二极管（LED）。NP GaN层是通过对硅衬底上的n型GaN进行电化学蚀刻制备的。在NP GaN层上生长的无裂纹GaN的晶体质量得到显著改善，残余拉应力也有所降低。与没有NP GaN层的传统LED相比，在20 mA注入电流下，光输出功率提高了120%。光输出功率的大幅提高归因于位错的减少、LED中光的有效散射以及NP GaN层对光传播到硅衬底的抑制。
