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利用基于 X 射线的微观和光谱技术观察 ZnO 纳米结构中的 d0 磁性起源。

Observation of the origin of d0 magnetism in ZnO nanostructures using X-ray-based microscopic and spectroscopic techniques.

机构信息

Department of Physics, Tamkang University, Tamsui 251, Taiwan.

出版信息

Nanoscale. 2014 Aug 7;6(15):9166-76. doi: 10.1039/c4nr01961j.

Abstract

Efforts have been made to elucidate the origin of d(0) magnetism in ZnO nanocactuses (NCs) and nanowires (NWs) using X-ray-based microscopic and spectroscopic techniques. The photoluminescence and O K-edge and Zn L3,2-edge X-ray-excited optical luminescence spectra showed that ZnO NCs contain more defects than NWs do and that in ZnO NCs, more defects are present at the O sites than at the Zn sites. Specifically, the results of O K-edge scanning transmission X-ray microscopy (STXM) and the corresponding X-ray-absorption near-edge structure (XANES) spectroscopy demonstrated that the impurity (non-stoichiometric) region in ZnO NCs contains a greater defect population than the thick region. The intensity of O K-edge STXM-XANES in the impurity region is more predominant in ZnO NCs than in NWs. The increase in the unoccupied (occupied) density of states at/above (at/below) the conduction-band minimum (valence-band maximum) or the Fermi level is related to the population of defects at the O sites, as revealed by comparing the ZnO NCs to the NWs. The results of O K-edge and Zn L3,2-edge X-ray magnetic circular dichroism demonstrated that the origin of magnetization is attributable to the O 2p orbitals rather than the Zn d orbitals. Further, the local density approximation (LDA) + U verified that vacancies in the form of dangling or unpaired 2p states (due to Zn vacancies) induced a significant local spin moment in the nearest-neighboring O atoms to the defect center, which was determined from the uneven local spin density by analyzing the partial density of states of O 2p in ZnO.

摘要

已经采用基于 X 射线的微观和光谱技术来阐明 ZnO 纳米仙人掌(NC)和纳米线(NW)中 d(0) 磁性的起源。光致发光和 O K 边以及 Zn L3,2 边 X 射线激发光致发光光谱表明,与 NW 相比,ZnO NC 包含更多的缺陷,并且在 ZnO NC 中,O 位的缺陷比 Zn 位的缺陷更多。具体来说,O K 边扫描透射 X 射线显微镜(STXM)和相应的 X 射线吸收近边结构(XANES)光谱结果表明,在 ZnO NC 中,杂质(非化学计量)区域比厚区域包含更多的缺陷。在 ZnO NC 中,O K 边 STXM-XANES 的强度比在 NW 中更为突出。与 NW 相比,在 O 位缺陷的影响下,在导带底(价带顶)上方/下方(在导带底上方/下方)的未占据(占据)态密度的增加与缺陷的密度有关。O K 边和 Zn L3,2 边 X 射线磁圆二色性的结果表明,磁化的起源归因于 O 2p 轨道而不是 Zn d 轨道。此外,局域密度近似(LDA)+ U 验证了形式为悬空或未配对 2p 态(由于 Zn 空位)的空位在缺陷中心的最近邻 O 原子中诱导了显著的局域自旋矩,这是通过分析 ZnO 中 O 2p 的部分态密度来确定的。

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