Kim Jin Tae
Opt Lett. 2014 Jul 1;39(13):3997-4000. doi: 10.1364/OL.39.003997.
To extend the application of an emerging plasmonic material, vanadium dioxide (VO₂), in silicon photonics technology, we propose a complementary metal-oxide-semiconductor (CMOS)-compatible hybrid plasmonic modulator using an VO₂ insulator-metal phase transition. The optical device is based on a directional coupler that consists of a Si waveguide and a Si-SiO₂-VO₂-SiO₂-Si hybrid plasmonic waveguide. By electrically triggering the phase of VO₂ with a driving voltage of 2 V, the propagation loss of the hybrid plasmonic waveguide is switched, and hence the output optical power is modulated. The on/off extinction ratio is larger than 3.0 dB on the entire C-band.
为了拓展新兴等离子体材料二氧化钒（VO₂）在硅光子技术中的应用，我们提出了一种利用VO₂绝缘体-金属相变的互补金属氧化物半导体（CMOS）兼容混合等离子体调制器。该光学器件基于一个定向耦合器，它由一个硅波导和一个Si-SiO₂-VO₂-SiO₂-Si混合等离子体波导组成。通过用2 V的驱动电压电触发VO₂的相位，混合等离子体波导的传播损耗被切换，从而调制输出光功率。在整个C波段上，开/关消光比大于3.0 dB。
