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通过使用氧化物分子束外延技术实现层状氧化物结构中的精确缺陷控制。

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy.

机构信息

Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany.

出版信息

Beilstein J Nanotechnol. 2014 May 8;5:596-602. doi: 10.3762/bjnano.5.70. eCollection 2014.

DOI:10.3762/bjnano.5.70
PMID:24995148
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4079053/
Abstract

In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2- x Sr x NiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.

摘要

本文介绍了最近在马克斯-普朗克固体研究所安装的原子层逐层氧化物分子束外延(ALL-oxide MBE),并报告了其现状,提供了一些成功应用于不同层状氧化物合成的实例,特别提到了超导 La2CuO4 和绝缘体-金属 La2- x Sr x NiO4。简要回顾了 ALL-oxide MBE 技术及其在沉积各种复杂氧化物、人工化合物和异质结构的原子级光滑单晶薄膜方面的独特能力,介绍了我们追求对这些系统进行深入研究的目标,特别强调结构缺陷,旨在通过精确的缺陷控制来调整其功能特性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/b0a8000906f0/Beilstein_J_Nanotechnol-05-596-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/08b3e6eef5b3/Beilstein_J_Nanotechnol-05-596-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/a56f0130643d/Beilstein_J_Nanotechnol-05-596-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/2210ebef7223/Beilstein_J_Nanotechnol-05-596-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/b741fe11283c/Beilstein_J_Nanotechnol-05-596-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/a5a4766b56eb/Beilstein_J_Nanotechnol-05-596-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/28d445a42341/Beilstein_J_Nanotechnol-05-596-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/81bbb226df5f/Beilstein_J_Nanotechnol-05-596-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/b0a8000906f0/Beilstein_J_Nanotechnol-05-596-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/08b3e6eef5b3/Beilstein_J_Nanotechnol-05-596-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/a56f0130643d/Beilstein_J_Nanotechnol-05-596-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/2210ebef7223/Beilstein_J_Nanotechnol-05-596-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/b741fe11283c/Beilstein_J_Nanotechnol-05-596-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/a5a4766b56eb/Beilstein_J_Nanotechnol-05-596-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/28d445a42341/Beilstein_J_Nanotechnol-05-596-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/81bbb226df5f/Beilstein_J_Nanotechnol-05-596-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/35e0/4079053/b0a8000906f0/Beilstein_J_Nanotechnol-05-596-g009.jpg

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