Department of Materials Science and Engineering and ‡Department of Electrical Engineering and Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 305-701, Republic of Korea.
ACS Nano. 2014 Aug 26;8(8):7671-7. doi: 10.1021/nn5032214. Epub 2014 Jul 14.
There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. A numerical simulation on the temperature history of the SiC surface during laser irradiation reveals that the surface temperature of SiC can be accurately controlled to grow nitrogen-doped graphene from the thermal decomposition of nitrogen-doped SiC. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities.
已经有许多努力通过化学掺杂来提高基于石墨烯的电子器件的性能。大多数研究都集中在气相掺杂的化学气相沉积上。然而，这需要一个复杂的转移过程，会导致残留聚合物产生不希望的掺杂和缺陷。在这里，我们报告了一种通过碳化硅（SiC）衬底进行掺杂石墨烯的固相合成方法，该方法包括由脉冲激光照射驱动的掺杂剂源。这种方法提供了在没有转移步骤的情况下，在绝缘 SiC 衬底上原位直接生长掺杂石墨烯的方法。激光照射期间 SiC 表面温度历史的数值模拟表明，可以精确控制 SiC 的表面温度，从而通过氮掺杂 SiC 的热分解来生长氮掺杂石墨烯。激光诱导的固相掺杂石墨烯非常有希望实现具有所需功能的基于石墨烯的纳米电子学。
