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掺杂:有机晶体管的关键促进剂。

Doping: A Key Enabler for Organic Transistors.

机构信息

Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul, 100-715, Republic of Korea.

School of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu, 210023, China.

出版信息

Adv Mater. 2018 Nov;30(46):e1801830. doi: 10.1002/adma.201801830. Epub 2018 Aug 13.

Abstract

Organic field-effect transistors (OFETs) are the central building blocks of organic electronics, but still suffer from low performance and manufacturing difficulties. This is due in part to the absence of doping, which is mostly excluded from OFET applications for the concern about uncontrollable dopant diffusion. Doping enabled the modern semiconductor industry to build essential components like Ohmic contacts and P-N junctions, empowering devices to function as designed. Recent breakthroughs in organic semiconductors and doping techniques demonstrated that doping can also be a key enabler for high-performance OFETs. However, the knowledge of organic doping remains limited particularly for OFET use. Therefore, this review addresses OFET doping from a device perspective. The paper overviews doping basics and roles in advanced complementary technologies. These fundamentals help to understand why and how doping provides the desired transistor characteristics. Typical OFETs without doping are discussed, with consideration for operating principle and problems caused by the absence of doping. Achievements for channel, contact, and overall doping are also examined to clarify the corresponding doping roles. Finally, doping mechanisms, techniques, and dopants associated with OFET applications are reviewed. This paper promotes fundamental understanding of OFET doping for the development of high-performance OFETs with doped components.

摘要

有机场效应晶体管(OFETs)是有机电子学的核心构建模块,但仍存在性能低和制造困难的问题。这在一定程度上是由于缺乏掺杂,由于担心掺杂剂扩散不可控,掺杂大多被排除在 OFET 应用之外。掺杂使现代半导体行业能够构建欧姆接触和 P-N 结等基本组件,使设备能够按设计运行。最近在有机半导体和掺杂技术方面的突破表明,掺杂也可以成为高性能 OFET 的关键推动因素。然而,对于有机掺杂的了解仍然有限,特别是对于 OFET 的应用。因此,本综述从器件的角度探讨了 OFET 的掺杂。本文概述了掺杂基础知识及其在先进互补技术中的作用。这些基础知识有助于理解为什么以及如何掺杂提供所需的晶体管特性。讨论了没有掺杂的典型 OFET,同时考虑了工作原理和缺乏掺杂引起的问题。还检查了沟道、接触和整体掺杂的成就,以阐明相应的掺杂作用。最后,综述了与 OFET 应用相关的掺杂机制、技术和掺杂剂。本文促进了对 OFET 掺杂的基本理解,以开发具有掺杂组件的高性能 OFET。

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