Colless J I, Mahoney A C, Hornibrook J M, Doherty A C, Lu H, Gossard A C, Reilly D J
ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia.
Materials Department, University of California, Santa Barbara, California 93106, USA.
Phys Rev Lett. 2013 Jan 25;110(4):046805. doi: 10.1103/PhysRevLett.110.046805.
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate sensing technique against the well established quantum point contact charge detector and find comparable performance with a bandwidth of ∼ 10 MHz and an equivalent charge sensitivity of ∼ 6.3 × 10(-3) e/sqrt[Hz]. Dispersive gate sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays.
我们报告了在少电子 regime 中使用原位栅电极作为灵敏探测器对双量子点进行的色散电荷态读出。我们将这种栅极传感技术与成熟的量子点接触电荷探测器进行了对比测试，发现其性能相当，带宽约为10 MHz，等效电荷灵敏度约为6.3×10^(-3) e/√Hz。色散栅极传感减轻了量子点系统中单独电荷探测器的负担，并有望实现对规模化阵列中量子比特的读出。
