Crippa A, Ezzouch R, Aprá A, Amisse A, Laviéville R, Hutin L, Bertrand B, Vinet M, Urdampilleta M, Meunier T, Sanquer M, Jehl X, Maurand R, De Franceschi S
CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France.
CEA, LETI, Minatec Campus, F-38000, Grenoble, France.
Nat Commun. 2019 Jul 3;10(1):2776. doi: 10.1038/s41467-019-10848-z.
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.
硅自旋量子比特已成为通往大规模量子处理器的一条有前景的途径。在此前景下，开发涉及最小设备开销的可扩展量子比特读出方案是至关重要的一步。本文我们报告了用于全功能自旋量子比特器件色散读出的栅极耦合射频反射测量的实现。我们使用采用工业标准硅技术制造的p型双栅晶体管。第一个栅极限制一个编码自旋量子比特的空穴量子点，第二个栅极限制一个用于读出的辅助量子点。通过集总元件谐振器对自旋选择性点间隧穿的相位响应来测量量子比特状态。所展示的量子比特读出方案无需与费米库耦合，从而提供了一种紧凑且潜在可扩展的解决方案，其操作温度可扩展到1 K以上。
