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量子点微腔发射中的量子存储效应。

Quantum-memory effects in the emission of quantum-dot microcavities.

机构信息

Department of Physics, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany.

Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany.

出版信息

Phys Rev Lett. 2014 Aug 29;113(9):093902. doi: 10.1103/PhysRevLett.113.093902.

DOI:10.1103/PhysRevLett.113.093902
PMID:25215985
Abstract

The experimentally measured input-output characteristics of optically pumped semiconductor microcavities exhibits unexpected oscillations modifying the fundamentally linear slope in the excitation power regime below lasing. A systematic microscopic analysis reproduces these oscillations, identifying them as a genuine quantum-memory effect, i.e., a photon-density correlation accumulated during the excitation. With the use of projected quantum measurements, it is shown that the input-output oscillations can be controlled and enhanced by an order of magnitude when the quantum fluctuations of the pump are adjusted.

摘要

实验测量的光泵浦半导体微腔的输入-输出特性表现出出人意料的振荡,改变了低于激光激发功率下的基本线性斜率。系统的微观分析再现了这些振荡,将其确定为真正的量子存储效应,即激发过程中积累的光子密度相关性。通过使用投影量子测量,当调整泵浦的量子涨落时,可以将输入-输出振荡控制和增强一个数量级。

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