The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States.
Nano Lett. 2014 Nov 12;14(11):6080-6. doi: 10.1021/nl502942z. Epub 2014 Oct 6.
The discovery of ballistic transport in graphene grown on SiC(0001) sidewall trenches has sparked an intense effort to uncover the origin of this exceptional conductivity. How a ribbon's edge termination, width, and topography influence its transport is not yet understood. This work presents the first structural and electronic comparison of sidewall graphene grown with different edge terminations. We show that armchair and zigzag terminated ribbons, grown from SiC, have very different topographies and interact differently with the substrate, properties that are critical to device architecture in sidewall ribbon electronics.
在 SiC(0001) 侧壁沟槽上生长的石墨烯中发现弹道传输，这激发了人们努力揭示这种非凡导电性的起源。目前尚不清楚带状边缘的终止方式、宽度和形貌如何影响其传输。这项工作首次对具有不同边缘终止的侧壁石墨烯进行了结构和电子比较。我们表明，从 SiC 生长的扶手椅和锯齿形终止的带状物具有非常不同的形貌，并与衬底以不同的方式相互作用，这些特性对于侧壁带状电子器件的器件结构至关重要。
