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利用X射线纳米衍射绘制锆钛酸铅铁电薄膜中晶界附近的畴结构

Mapping domain structures near a grain boundary in a lead zirconate titanate ferroelectric film using X-ray nanodiffraction.

作者信息

Udovenko Stanislav, Son Yeongwoo, Tipsawat Pannawit, Knox Reilly J, Hruszkewycz Stephan O, Yan Hanfei, Huang Xiaojing, Pattammattel Ajith, Zajac Marc, Cha Wonsuk, Pagan Darren C, Trolier-McKinstry Susan

机构信息

Department of Materials Science and Engineering and Materials Research Institute Pennsylvania State University State College Pennsylvania USA.

Materials Science Division Argonne National Laboratory Lemont Illinois USA.

出版信息

J Appl Crystallogr. 2024 Oct 29;57(Pt 6):1789-1799. doi: 10.1107/S1600576724009026. eCollection 2024 Dec 1.

Abstract

The effect of an electric field on local domain structure near a 24° tilt grain boundary in a 200 nm-thick Pb(ZrTi)O bi-crystal ferroelectric film was probed using synchrotron nanodiffraction. The bi-crystal film was grown epitaxially on SrRuO-coated (001) SrTiO 24° tilt bi-crystal substrates. From the nanodiffraction data, real-space maps of the ferroelectric domain structure around the grain boundary prior to and during application of a 200 kV cm electric field were reconstructed. In the vicinity of the tilt grain boundary, the distributions of densities of -type tetragonal domains with the axis aligned with the film normal were calculated on the basis of diffracted intensity ratios of - and -type domains and reference powder diffraction data. Diffracted intensity was averaged along the grain boundary, and it was shown that the density of -type tetragonal domains dropped to ∼50% of that of the bulk of the film over a range ±150 nm from the grain boundary. This work complements previous results acquired by band excitation piezoresponse force microscopy, suggesting that reduced nonlinear piezoelectric response around grain boundaries may be related to the change in domain structure, as well as to the possibility of increased pinning of domain wall motion. The implications of the results and analysis in terms of understanding the role of grain boundaries in affecting the nonlinear piezoelectric and dielectric responses of ferroelectric materials are discussed.

摘要

利用同步加速器纳米衍射技术,研究了电场对200 nm厚的Pb(ZrTi)O双晶铁电薄膜中24°倾斜晶界附近局部畴结构的影响。该双晶薄膜在涂覆有SrRuO的(001)SrTiO 24°倾斜双晶衬底上外延生长。根据纳米衍射数据,重建了施加200 kV cm电场之前和期间晶界周围铁电畴结构的实空间图。在倾斜晶界附近,基于 - 型和 - 型畴的衍射强度比以及参考粉末衍射数据,计算了 轴与薄膜法线对齐的 - 型四方畴密度分布。沿晶界对衍射强度进行平均,结果表明,在距晶界±150 nm的范围内, - 型四方畴的密度降至薄膜本体密度的~50%。这项工作补充了之前通过带激发压电响应力显微镜获得的结果,表明晶界周围非线性压电响应的降低可能与畴结构的变化有关,也与畴壁运动钉扎增加的可能性有关。讨论了这些结果和分析对于理解晶界在影响铁电材料非线性压电和介电响应中作用的意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a87/11611287/4d7489652982/j-57-01789-fig1.jpg

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