School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People's Republic of China.
Nanoscale Res Lett. 2014 Oct 6;9(1):554. doi: 10.1186/1556-276X-9-554. eCollection 2014.
The electronic structure and optical properties of Mn and B, C, N co-doped molybdenum disulfide (MoS2) monolayers have been investigated through first-principles calculations. It is shown that the MoS2 monolayer reflects magnetism with a magnetic moment of 0.87 μB when co-doped with Mn-C. However, the systems co-doped with Mn-B and Mn-N atoms exhibit semiconducting behavior and their energy bandgaps are 1.03 and 0.81 eV, respectively. The bandgaps of the co-doped systems are smaller than those of the corresponding pristine forms, due to effective charge compensation between Mn and B (N) atoms. The optical properties of Mn-B (C, N) co-doped systems all reflect the redshift phenomenon. The absorption edge of the pure molybdenum disulfide monolayer is 0.8 eV, while the absorption edges of the Mn-B, Mn-C, and Mn-N co-doped systems become 0.45, 0.5, and 0 eV, respectively. As a potential material, MoS2 is widely used in many fields such as the production of optoelectronic devices, military devices, and civil devices.
通过第一性原理计算研究了 Mn 与 B、C、N 共掺杂二硫化钼(MoS2)单层的电子结构和光学性质。结果表明,当 Mn-C 共掺杂时,MoS2 单层具有 0.87μB 的磁矩,表现出铁磁性。然而,Mn-B 和 Mn-N 共掺杂体系表现出半导体行为,其能隙分别为 1.03 和 0.81eV。由于 Mn 和 B(N)原子之间的有效电荷补偿,共掺杂体系的能隙小于相应的原始形式。Mn-B(C,N)共掺杂体系的光学性质均反映出红移现象。纯二硫化钼单层的吸收边为 0.8eV,而 Mn-B、Mn-C 和 Mn-N 共掺杂体系的吸收边分别变为 0.45、0.5 和 0eV。作为一种潜在的材料,MoS2 广泛应用于光电设备、军事设备和民用设备等许多领域。