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Mn 和 B、C、N 共掺杂 MoS2 单层的电子结构和光学性质。

The electronic structure and optical properties of Mn and B, C, N co-doped MoS2 monolayers.

机构信息

School of Physics and Technology, University of Jinan, Nan Xin Zhuang west road No. 336, Jinan, Shandong 250022, People's Republic of China.

出版信息

Nanoscale Res Lett. 2014 Oct 6;9(1):554. doi: 10.1186/1556-276X-9-554. eCollection 2014.

Abstract

The electronic structure and optical properties of Mn and B, C, N co-doped molybdenum disulfide (MoS2) monolayers have been investigated through first-principles calculations. It is shown that the MoS2 monolayer reflects magnetism with a magnetic moment of 0.87 μB when co-doped with Mn-C. However, the systems co-doped with Mn-B and Mn-N atoms exhibit semiconducting behavior and their energy bandgaps are 1.03 and 0.81 eV, respectively. The bandgaps of the co-doped systems are smaller than those of the corresponding pristine forms, due to effective charge compensation between Mn and B (N) atoms. The optical properties of Mn-B (C, N) co-doped systems all reflect the redshift phenomenon. The absorption edge of the pure molybdenum disulfide monolayer is 0.8 eV, while the absorption edges of the Mn-B, Mn-C, and Mn-N co-doped systems become 0.45, 0.5, and 0 eV, respectively. As a potential material, MoS2 is widely used in many fields such as the production of optoelectronic devices, military devices, and civil devices.

摘要

通过第一性原理计算研究了 Mn 与 B、C、N 共掺杂二硫化钼(MoS2)单层的电子结构和光学性质。结果表明,当 Mn-C 共掺杂时,MoS2 单层具有 0.87μB 的磁矩,表现出铁磁性。然而,Mn-B 和 Mn-N 共掺杂体系表现出半导体行为,其能隙分别为 1.03 和 0.81eV。由于 Mn 和 B(N)原子之间的有效电荷补偿,共掺杂体系的能隙小于相应的原始形式。Mn-B(C,N)共掺杂体系的光学性质均反映出红移现象。纯二硫化钼单层的吸收边为 0.8eV,而 Mn-B、Mn-C 和 Mn-N 共掺杂体系的吸收边分别变为 0.45、0.5 和 0eV。作为一种潜在的材料,MoS2 广泛应用于光电设备、军事设备和民用设备等许多领域。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a7a/4194453/b8d9bd441817/1556-276X-9-554-1.jpg

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