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超薄 MoS2 的拉伸和断裂。

Stretching and breaking of ultrathin MoS2.

机构信息

Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne, Switzerland.

出版信息

ACS Nano. 2011 Dec 27;5(12):9703-9. doi: 10.1021/nn203879f. Epub 2011 Nov 16.

Abstract

We report on measurements of the stiffness and breaking strength of monolayer MoS(2), a new semiconducting analogue of graphene. Single and bilayer MoS(2) is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The resulting suspended, free-standing membranes are deformed and eventually broken using an atomic force microscope. We find that the in-plane stiffness of monolayer MoS(2) is 180 ± 60 Nm(-1), corresponding to an effective Young's modulus of 270 ± 100 GPa, which is comparable to that of steel. Breaking occurs at an effective strain between 6 and 11% with the average breaking strength of 15 ± 3 Nm(-1) (23 GPa). The strength of strongest monolayer membranes is 11% of its Young's modulus, corresponding to the upper theoretical limit which indicates that the material can be highly crystalline and almost defect-free. Our results show that monolayer MoS(2) could be suitable for a variety of applications such as reinforcing elements in composites and for fabrication of flexible electronic devices.

摘要

我们报告了单层 MoS(2)的刚性和断裂强度的测量结果,MoS(2)是石墨烯的一种新型半导体类似物。单层和双层 MoS(2)从块状体中剥离出来,并转移到包含微制造圆形孔阵列的衬底上。使用原子力显微镜使得到的悬空、自由站立的膜变形并最终断裂。我们发现,单层 MoS(2)的面内刚性为 180 ± 60 Nm(-1),对应的有效杨氏模量为 270 ± 100 GPa,与钢相当。断裂发生在有效应变为 6%至 11%之间,平均断裂强度为 15 ± 3 Nm(-1) (23 GPa)。最强的单层膜的强度是其杨氏模量的 11%,这对应于理论上限,表明该材料可以高度结晶且几乎无缺陷。我们的结果表明,单层 MoS(2)可适用于多种应用,例如复合材料中的增强元件以及制造柔性电子设备。

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