通过近距离升华法生长的单根碲化镉微线光电探测器。

Single CdTe microwire photodetectors grown by close-spaced sublimation method.

作者信息

Yang Gwangseok, Kim Byung-Jae, Kim Donghwan, Kim Jihyun

出版信息

Opt Express. 2014 Aug 11;22(16):18843-8. doi: 10.1364/OE.22.018843.

DOI:10.1364/OE.22.018843

PMID:25320970

Abstract

We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10(-3) cm2 V(-1) s(-1). Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.

摘要

我们展示了对紫外光高度敏感的单个碲化镉（CdTe）微线场效应晶体管（FET）。使用近距离升华系统催化生长密集的CdTe微线。系统地研究了其结构、形态、传输特性以及光电特性。CdTe微线FET表现出p型行为，场效应迁移率高达1.1×10⁻³ cm² V⁻¹ s⁻¹。我们在暗态和紫外光照条件下研究了CdTe微线FET的光电特性，其中光响应高度依赖于背栅偏置条件。我们基于CdTe微线FET的光电探测器在高性能微光电子应用方面具有前景。