室温下的1550纳米铟镓砷/铟铝砷单光子雪崩二极管。

1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature.

作者信息

Meng Xiao, Tan Chee Hing, Dimler Simon, David John P R, Ng Jo Shien

出版信息

Opt Express. 2014 Sep 22;22(19):22608-15. doi: 10.1364/OE.22.022608.

DOI:10.1364/OE.22.022608

Abstract

An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which corresponds to a temperature coefficient of breakdown voltage less than 7 mV/K. The single photon detection efficiency achieved in gated mode was 21 and 10% at 260 and 290 K, respectively. However the dark count rates were high due to excessive band-to-band tunneling current in the InAlAs avalanche region.

摘要

制备并表征了一种铟镓砷/铟铝砷单光子雪崩二极管。在260至290 K的温度范围内对器件进行了漏电流、暗计数和光子计数测量。由于铟铝砷中雪崩击穿具有更好的温度稳定性，在所研究的30 K温度范围内，器件的击穿电压变化小于0.2 V，这对应于击穿电压的温度系数小于7 mV/K。在选通模式下，在260 K和290 K时实现的单光子探测效率分别为21%和10%。然而，由于铟铝砷雪崩区域中带间隧穿电流过大，暗计数率较高。