Functional Thin Films Research Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China; Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), The City University of Hong Kong, Hong Kong SAR, China.
Small. 2015 Mar 18;11(11):1345-51. doi: 10.1002/smll.201402072. Epub 2014 Oct 27.
Due to its high theoretical capacity and low lithium insertion voltage plateau, silicon has been considered one of the most promising anodes for high energy and high power density lithium ion batteries (LIBs). However, its rapid capacity degradation, mainly caused by huge volume changes during lithium insertion/extraction processes, remains a significant challenge to its practical application. Engineering Si anodes with abundant free spaces and stabilizing them by incorporating carbon materials has been found to be effective to address the above problems. Using sodium chloride (NaCl) as a template, bubble sheet-like carbon film supported core-shell Si/C composites are prepared for the first time by a facile magnesium thermal reduction/glucose carbonization process. The capacity retention achieves up to 93.6% (about 1018 mAh g(-1)) after 200 cycles at 1 A g(-1). The good performance is attributed to synergistic effects of the conductive carbon film and the hollow structure of the core-shell nanospheres, which provide an ideal conductive matrix and buffer spaces for respectively electron transfer and Si expansion during lithiation process. This unique structure decreases the charge transfer resistance and suppresses the cracking/pulverization of Si, leading to the enhanced cycling performance of bubble sheet-like composite.
由于其理论容量高、锂嵌入电压平台低,硅已被认为是最有前途的高能和高功率密度锂离子电池(LIB)的阳极材料之一。然而,其快速的容量衰减,主要是由于锂插入/提取过程中的巨大体积变化引起的,仍然是其实际应用的一个重大挑战。通过工程设计具有丰富自由空间的硅阳极,并通过掺入碳材料来稳定它们,已经被发现是解决上述问题的有效方法。本文首次采用一种简便的镁热还原/葡萄糖碳化工艺,以氯化钠(NaCl)为模板,制备了具有泡状片状碳膜支撑核壳结构的硅/碳复合材料。在 1 A g(-1)的电流密度下,经过 200 次循环后,容量保持率高达 93.6%(约 1018 mAh g(-1))。良好的性能归因于导电碳膜和核壳纳米球中空结构的协同作用,它们在锂化过程中分别为电子转移和 Si 膨胀提供了理想的导电基质和缓冲空间。这种独特的结构降低了电荷转移电阻,并抑制了 Si 的开裂/粉碎,从而提高了泡状复合材料的循环性能。